Infineon BSC190N15NS: A High-Performance 150V OptiMOS Power MOSFET for Advanced Switching Applications
The relentless pursuit of higher efficiency, power density, and reliability in power electronics drives the continuous innovation in semiconductor technology. At the forefront of this evolution is Infineon Technologies with its OptiMOS™ power MOSFET family. The BSC190N15NS stands out as a premier 150V N-channel MOSFET engineered specifically for demanding high-frequency switching applications, setting a new benchmark in performance.
Engineered on Infineon's advanced superjunction technology, the BSC190N15NS is designed to minimize key losses that typically plague power conversion systems. Its cornerstone feature is its exceptionally low figure-of-merit (FOM), achieved by optimizing the trade-off between on-state resistance (R DS(on)) and gate charge (Q G). With a maximum R DS(on) of just 19 mΩ and a total gate charge (Q g) of 28 nC, this device ensures that both conduction and switching losses are drastically reduced. This allows power supply designers to push switching frequencies higher, leading to the development of smaller, lighter, and more efficient magnetic components and capacitors.
The benefits of this low-loss characteristic are most evident in applications such as:
Switch-Mode Power Supplies (SMPS): Particularly in telecom and server power supplies (e.g., 48V input intermediate bus converters) where efficiency targets are stringent.
Solar Inverters and Energy Storage Systems: Enhancing the overall efficiency of the power conversion chain.
Motor Control and Drives: Enabling compact and efficient designs for industrial automation.
Synchronous Rectification: Its low R DS(on) makes it an ideal choice for secondary-side rectification, minimizing the voltage drop and associated power loss.
Beyond its electrical performance, the BSC190N15NS is housed in a rugged and space-efficient SuperSO8 package. This package offers superior thermal performance compared to standard SO-8 packages, allowing for better heat dissipation from the silicon die to the printed circuit board (PCB). This directly translates to higher power handling capability and improved long-term reliability under stressful operating conditions. Furthermore, the device boasts a high body-diode ruggedness, enhancing its robustness in hard-switching and inductive load scenarios, which is critical for real-world applications where voltage spikes and surge currents can occur.
Compliance with the RoHS directive and qualification according to JEDEC standards ensure that this component meets the high-quality and environmental requirements of modern electronic products.
ICGOO FIND
The Infineon BSC190N15NS is a superior 150V power MOSFET that masterfully balances ultra-low conduction and switching losses with robust thermal performance. It is an optimal choice for engineers aiming to maximize efficiency and power density in advanced switching power applications, from enterprise computing to renewable energy systems.
Keywords: Low R DS(on), High-Frequency Switching, OptiMOS™, SuperSO8 Package, Power Efficiency
