Infineon IAUZ30N06S5L140ATMA1 OptiMOS 5 Power MOSFET: Driving High-Efficiency Power Conversion
In the realm of modern power electronics, achieving high efficiency and reliability is paramount. The Infineon IAUZ30N06S5L140ATMA1, a member of the advanced OptiMOS™ 5 power MOSFET family, stands out as a critical component engineered to meet these demanding requirements. Designed for a broad spectrum of applications—from server and telecom power supplies to industrial motor drives and battery management systems—this MOSFET sets a new benchmark in performance.
A key highlight of this device is its exceptionally low on-state resistance (RDS(on)) of just 1.4 mΩ at 10 V. This ultra-low resistance minimizes conduction losses, which is crucial for improving overall system efficiency, especially in high-current applications. Reduced power dissipation not only enhances performance but also alleviates thermal management challenges, allowing for more compact and cost-effective designs.
Moreover, the component features superior switching characteristics that significantly cut switching losses. This makes it ideal for high-frequency operations, enabling designers to increase power density without compromising thermal performance. The MOSFET’s optimized gate charge ensures smooth and fast switching, which is essential for applications requiring high efficiency and rapid response.
Packaged in a space-saving D2PAK-7 (TO-263-7), the IAUZ30N06S5L140ATMA1 offers improved thermal conductivity and power dissipation. The package is designed to support automated assembly processes, enhancing manufacturing throughput while maintaining robustness.
With a voltage rating of 60 V and continuous drain current capability of 300 A, this OptiMOS 5 device provides a reliable solution for high-power conversion stages. Its strong performance under extreme conditions also contributes to system longevity and reduced failure rates.
The Infineon IAUZ30N06S5L140ATMA1 OptiMOS 5 Power MOSFET delivers industry-leading efficiency and power density, making it an optimal choice for next-generation power conversion systems demanding high reliability and thermal performance.
Keywords:
Power MOSFET, High Efficiency, OptiMOS 5, Low RDS(on), Power Conversion
